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IRFP 240 MFET N-Channel Transistor
IRFP 240 MFET N-Channel Transistor
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$ 60.07

$ 46.21

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Product Details

IRFP 240 MFET Features

  • • 20A, 200V
  • • rDS(ON) = 0.180Ω
  • • Single Pulse Avalanche Energy Rated
  • • SOA is Power Dissipation Limited
  • • Nanosecond Switching Speeds
  • • Linear Transfer Characteristics
  • • High Input Impedance

Technical

  • Drain to Source Voltage (VDS) : 200 V
  • Drain to Gate Voltage (RGS = 20kΩ)  (VDGR) : 200 V
  • Continuous Drain Current (ID) :  20 A
  • TC = 100oC : 12 A
  • Pulsed Drain Current (IDM) : 80 A
  • Gate to Source Voltage (VGS) : ±20 V
  • Maximum Power Dissipation (PD) 150 W
  • Linear Derating Factor  : 1.2 W/Degree C
  • Single Pulse Avalanche Energy Rating (EAS) : 510 mJ
  • Operating and Storage Temperature (TJ, TSTG) : -55 to 150 Degree C

     

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